IXYS Linear L2 Type N-Channel MOSFET, 178 A, 100 V Enhancement, 4-Pin SOT-227 IXTN200N10L2

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604,26 kr

(exkl. moms)

755,32 kr

(inkl. moms)

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RS-artikelnummer:
125-8048
Tillv. art.nr:
IXTN200N10L2
Tillverkare / varumärke:
IXYS
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Brand

IXYS

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

178A

Maximum Drain Source Voltage Vds

100V

Series

Linear L2

Package Type

SOT-227

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

11mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

20 V

Forward Voltage Vf

1.4V

Maximum Power Dissipation Pd

830W

Typical Gate Charge Qg @ Vgs

540nC

Maximum Operating Temperature

150°C

Height

9.6mm

Width

25.07 mm

Length

38.23mm

Standards/Approvals

No

Automotive Standard

No

COO (Country of Origin):
PH

N-Channel Power MOSFET, IXYS Linear Series


N-Channel Power MOSFETs designed specifically for linear operation. These devices feature extended Forward Bias Safe Operating Area (FBSOA) for increased ruggedness and reliability.

MOSFET Transistors, IXYS


A wide range of Advanced discrete Power MOSFET devices from IXYS

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