Infineon HEXFET Type N-Channel MOSFET, 343 A, 40 V Enhancement, 3-Pin TO-220 IRLB3034PBF

RS-artikelnummer:: 124-9024
Tillv. art.nr:: IRLB3034PBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 343 A, 40 V Enhancement, 3-Pin TO-220 IRLB3034PBF

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RS-artikelnummer:: 124-9024
Tillv. art.nr:: IRLB3034PBF
Tillverkare / varumärke:: Infineon

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	343A
	Maximum Drain Source Voltage Vds	40V
	Series	HEXFET
	Package Type	TO-220
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	2mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	375W
	Minimum Operating Temperature	-55°C
	Maximum Gate Source Voltage Vgs	20 V
	Typical Gate Charge Qg @ Vgs	108nC
	Forward Voltage Vf	1.3V
	Maximum Operating Temperature	175°C
	Length	10.67mm
	Standards/Approvals	No
	Width	4.83 mm
	Height	9.02mm
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 343A
	Maximum Drain Source Voltage Vds 40V
	Series HEXFET
	Package Type TO-220
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 2mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 375W
	Minimum Operating Temperature -55°C
	Maximum Gate Source Voltage Vgs 20 V
	Typical Gate Charge Qg @ Vgs 108nC
	Forward Voltage Vf 1.3V
	Maximum Operating Temperature 175°C
	Length 10.67mm
	Standards/Approvals No
	Width 4.83 mm
	Height 9.02mm
	Automotive Standard No

COO (Country of Origin):: MX

Infineon HEXFET Series MOSFET, 343A Maximum Continuous Drain Current, 40V Maximum Drain Source Voltage - IRLB3034PBF

This high-performance MOSFET is designed for demanding applications in automation and electronics. With an enhancement mode configuration and a maximum drain-source voltage of 40V, it ensures reliable operation in various conditions. The TO-220AB package type facilitates easy mounting, making it suitable for various designs. Its compact dimensions of 10.67mm in length, 4.83mm in width, and 9.02mm in height further enhance its versatility.

Features & Benefits

• Capable of handling a maximum continuous drain current of 343A

• Optimised for logic level drive for simplified control

• Designed for high-speed power switching requirements

• Wide operating temperature range from -55°C to +175°C

• Superior gate threshold of 1V to 2.5V benefits low voltage operations

Applications

• Ideal for DC motor drive systems

• Utilised in high efficiency synchronous rectification setups

• Suitable for uninterruptible power supplies

• Effective in hard switched and high-frequency circuits

What are the maximum power dissipation capabilities of this component?

The device can dissipate up to 375W under optimal conditions, allowing it to manage significant heat loads in demanding applications.

How does the low RDS(on) contribute to performance?

The low on-resistance of 2mΩ reduces energy losses, enabling higher efficiency and cooler operation, essential for high current applications.

Can this MOSFET be used in automation systems?

Yes, due to its high current capacity and reliable switching performance, it is well-suited for various automation applications, enhancing efficiency and control.

What mounting options does this component offer?

It employs a through-hole mounting type, simplifying integration into various circuit designs while ensuring secure connections.