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Infineon HEXFET Type N-Channel MOSFET, 134 A, 100 V Enhancement, 3-Pin TO-247

RS-artikelnummer:: 124-9013
Tillv. art.nr:: IRFP4310ZPBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 134 A, 100 V Enhancement, 3-Pin TO-247

Mängdrabatt möjlig

Antal (1 rör med 25 enheter)*

925,00 kr

(exkl. moms)

1 156,25 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

I lager

Dessutom levereras 300 enhet(er) från den 31 december 2025

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Enheter	Per enhet	Per Rør*
25 - 25	37,00 kr	925,00 kr
50 - 100	31,082 kr	777,05 kr
125 - 225	29,599 kr	739,98 kr
250 - 475	27,01 kr	675,25 kr
500 +	25,899 kr	647,48 kr

*vägledande pris

RS-artikelnummer:: 124-9013
Tillv. art.nr:: IRFP4310ZPBF
Tillverkare / varumärke:: Infineon

Specifikationer

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Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	134A
	Maximum Drain Source Voltage Vds	100V
	Package Type	TO-247
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	6mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	120nC
	Forward Voltage Vf	1.3V
	Maximum Power Dissipation Pd	280W
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Height	20.7mm
	Length	15.87mm
	Width	5.31 mm
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 134A
	Maximum Drain Source Voltage Vds 100V
	Package Type TO-247
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 6mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 120nC
	Forward Voltage Vf 1.3V
	Maximum Power Dissipation Pd 280W
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Height 20.7mm
	Length 15.87mm
	Width 5.31 mm
	Automotive Standard No

COO (Country of Origin):: MX

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