Infineon HEXFET Type N-Channel MOSFET, 350 A, 40 V Enhancement, 3-Pin TO-247
- RS-artikelnummer:
- 165-7610
- Tillv. art.nr:
- IRFP4004PBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 25 enheter)*
1 122,25 kr
(exkl. moms)
1 402,75 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- Dessutom levereras 550 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 25 - 25 | 44,89 kr | 1 122,25 kr |
| 50 - 100 | 42,65 kr | 1 066,25 kr |
| 125 - 225 | 40,853 kr | 1 021,33 kr |
| 250 - 475 | 39,057 kr | 976,43 kr |
| 500 + | 36,364 kr | 909,10 kr |
*vägledande pris
- RS-artikelnummer:
- 165-7610
- Tillv. art.nr:
- IRFP4004PBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 350A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | TO-247 | |
| Series | HEXFET | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 2mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 380W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 220nC | |
| Forward Voltage Vf | 1.3V | |
| Maximum Operating Temperature | 175°C | |
| Height | 20.7mm | |
| Length | 15.87mm | |
| Standards/Approvals | No | |
| Width | 5.31 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 350A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type TO-247 | ||
Series HEXFET | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 2mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 380W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 220nC | ||
Forward Voltage Vf 1.3V | ||
Maximum Operating Temperature 175°C | ||
Height 20.7mm | ||
Length 15.87mm | ||
Standards/Approvals No | ||
Width 5.31 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MX
N-Channel Power MOSFET 40V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range Benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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