Infineon HEXFET Type N-Channel MOSFET, 30 A, 200 V Enhancement, 3-Pin TO-247

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RS-artikelnummer:
124-8762
Tillv. art.nr:
IRFP250MPBF
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

30A

Maximum Drain Source Voltage Vds

200V

Series

HEXFET

Package Type

TO-247

Mount Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance Rds

75mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

20 V

Typical Gate Charge Qg @ Vgs

123nC

Maximum Power Dissipation Pd

214W

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.3V

Maximum Operating Temperature

175°C

Width

5.2 mm

Standards/Approvals

No

Length

16.13mm

Height

21.1mm

Automotive Standard

No

COO (Country of Origin):
CN

Infineon HEXFET Series MOSFET, 30A Maximum Continuous Drain Current, 214W Maximum Power Dissipation - IRFP250MPBF


This N-channel MOSFET is designed for high performance and efficiency across a variety of applications. It offers a maximum continuous drain current of 30A and a drain-source voltage rating of 200V, making it suitable for tasks in the automation and electronics sectors. Its design ensures effective thermal performance, which enhances its use in electrical and mechanical industries.

Features & Benefits


• Dynamic dv/dt rating ensures stability during operation

• Enhanced thermal capabilities, with an operating temperature of up to 175°C

• Low on-resistance reduces power losses

• Fully avalanche-rated, providing over-voltage protection

• Simple drive requirements for easier integration into designs

Applications


• Suitable for high-frequency switching

• Ideal for power supplies and converters

• Applicable in motor control systems and industrial drives

• Utilised in renewable energy systems, such as solar inverters

How is thermal performance managed in demanding environments?


The thermal resistance characteristics are designed for efficient heat dissipation, allowing operation from -55°C to +175°C.

What are the implications of the low Rds(on)?


The low on-resistance results in lower power dissipation during conduction, enhancing overall system efficiency and reducing thermal stress on components.

Can this device be used for parallel configurations?


Yes, the design facilitates paralleling, increasing current capacity and improving thermal performance in high-power applications.

What should be considered when selecting the gate drive voltage?


A gate drive voltage between 2V and 4V is optimal for ensuring sufficient switching performance and preventing undesired operation.

What measures are in place for over-voltage protection?


The MOSFET is fully avalanche-rated, safeguarding against transient over-voltages and ensuring reliable operation in fluctuating conditions.

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