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Infineon HEXFET Type N-Channel MOSFET, 160 A, 60 V Enhancement, 3-Pin TO-247 IRFP3306PBF

RS-artikelnummer:: 124-9011
Tillv. art.nr:: IRFP3306PBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 160 A, 60 V Enhancement, 3-Pin TO-247 IRFP3306PBF

Mängdrabatt möjlig

Antal (1 rör med 25 enheter)*

690,60 kr

(exkl. moms)

863,25 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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400 enhet(er) levereras från den 02 april 2026

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Enheter	Per enhet	Per Rør*
25 - 25	27,624 kr	690,60 kr
50 - 100	23,202 kr	580,05 kr
125 - 225	22,10 kr	552,50 kr
250 - 475	20,164 kr	504,10 kr
500 +	19,336 kr	483,40 kr

*vägledande pris

RS-artikelnummer:: 124-9011
Tillv. art.nr:: IRFP3306PBF
Tillverkare / varumärke:: Infineon

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Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	160A
	Maximum Drain Source Voltage Vds	60V
	Package Type	TO-247
	Series	HEXFET
	Mount Type	Through Hole
	Pin Count	3
	Maximum Drain Source Resistance Rds	4mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	85nC
	Maximum Power Dissipation Pd	220W
	Forward Voltage Vf	1.3V
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Operating Temperature	175°C
	Standards/Approvals	No
	Width	5.31 mm
	Length	15.87mm
	Height	20.7mm
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 160A
	Maximum Drain Source Voltage Vds 60V
	Package Type TO-247
	Series HEXFET
	Mount Type Through Hole
	Pin Count 3
	Maximum Drain Source Resistance Rds 4mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 85nC
	Maximum Power Dissipation Pd 220W
	Forward Voltage Vf 1.3V
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Operating Temperature 175°C
	Standards/Approvals No
	Width 5.31 mm
	Length 15.87mm
	Height 20.7mm
	Automotive Standard No

COO (Country of Origin):: MX

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