Infineon HEXFET Type N-Channel MOSFET, 160 A, 55 V Enhancement, 3-Pin TO-247 IRFP1405PBF
- RS-artikelnummer:
- 165-8165
- Tillv. art.nr:
- IRFP1405PBF
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 rör med 25 enheter)*
479,575 kr
(exkl. moms)
599,475 kr
(inkl. moms)
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- Dessutom levereras 175 enhet(er) från den 29 december 2025
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Enheter | Per enhet | Per Rør* |
|---|---|---|
| 25 - 25 | 19,183 kr | 479,58 kr |
| 50 - 100 | 18,225 kr | 455,63 kr |
| 125 - 225 | 17,458 kr | 436,45 kr |
| 250 - 475 | 16,688 kr | 417,20 kr |
| 500 + | 15,537 kr | 388,43 kr |
*vägledande pris
- RS-artikelnummer:
- 165-8165
- Tillv. art.nr:
- IRFP1405PBF
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 160A | |
| Maximum Drain Source Voltage Vds | 55V | |
| Series | HEXFET | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 5.3mΩ | |
| Channel Mode | Enhancement | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Maximum Power Dissipation Pd | 310W | |
| Minimum Operating Temperature | -55°C | |
| Forward Voltage Vf | 1.3V | |
| Typical Gate Charge Qg @ Vgs | 120nC | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.29mm | |
| Standards/Approvals | No | |
| Height | 5.31mm | |
| Width | 19.71 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 160A | ||
Maximum Drain Source Voltage Vds 55V | ||
Series HEXFET | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 5.3mΩ | ||
Channel Mode Enhancement | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Maximum Power Dissipation Pd 310W | ||
Minimum Operating Temperature -55°C | ||
Forward Voltage Vf 1.3V | ||
Typical Gate Charge Qg @ Vgs 120nC | ||
Maximum Operating Temperature 175°C | ||
Length 15.29mm | ||
Standards/Approvals No | ||
Height 5.31mm | ||
Width 19.71 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
N-Channel Power MOSFET 55V, Infineon
Infineon's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
MOSFET Transistors, Infineon
Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.
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