Infineon HEXFET Type N-Channel MOSFET, 270 A, 60 V Enhancement, 3-Pin TO-247 IRFP3006PBF

RS-artikelnummer:: 260-5869
Distrelec artikelnummer:: 302-84-049
Tillv. art.nr:: IRFP3006PBF
Tillverkare / varumärke:: Infineon

Infineon HEXFET Type N-Channel MOSFET, 270 A, 60 V Enhancement, 3-Pin TO-247 IRFP3006PBF

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RS-artikelnummer:: 260-5869
Distrelec artikelnummer:: 302-84-049
Tillv. art.nr:: IRFP3006PBF
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	270A
	Maximum Drain Source Voltage Vds	60V
	Series	HEXFET
	Package Type	TO-247
	Mount Type	Through Hole
	Pin Count	3
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	20.7mm
	Standards/Approvals	No
	Length	15.87mm
	Automotive Standard	No
	Distrelec Product Id	30284049

	Välj alla
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 270A
	Maximum Drain Source Voltage Vds 60V
	Series HEXFET
	Package Type TO-247
	Mount Type Through Hole
	Pin Count 3
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 20.7mm
	Standards/Approvals No
	Length 15.87mm
	Automotive Standard No
	Distrelec Product Id 30284049

Datasheet - IRFP3006PBF

Infineon HEXFET Series MOSFET, 270A Maximum Continuous Drain Current, 60V Maximum Drain Source Voltage - IRFP3006PBF

This high-performance MOSFET is a critical component for modern electronic applications, designed with enhanced efficiency and reliability in mind. The dimensions of this TO-247 package include a length of 15.87mm, width of 5.31mm, and height of 20.7mm. It operates effectively in a variety of environments and contributes significant value in power management situations.

Features & Benefits

• High continuous drain current rated at 270A for demanding requirements

• 60V drain-source capability for versatile usage

• Maximum power dissipation of 375W supports robust performance

• Enhanced avalanche capability for better system protection

• Through-hole mounting ensures solid and dependable installation

Applications

• Utilised in high-efficiency synchronous rectification systems

• Ideal for uninterruptible power supplies to ensure reliability

• Effective in high-speed power switching

• Suitable for hard-switched and high-frequency circuitry

What thermal performance can be expected under continuous operating conditions?

With a maximum operating temperature of +175°C, it reliably handles high thermal loads, while the thermal resistance from junction to case supports efficient heat dissipation.

How does the gate threshold voltage contribute to its performance in circuits?

It features a maximum gate threshold voltage of 4V, ensuring that control signals activate the MOSFET effectively, providing synergy with lower voltage control circuits.

What are the implications of the low Rds(on) for circuit efficiency?

A low on-resistance of 2.5mΩ significantly reduces energy losses, enhancing overall circuit efficiency, especially in power-intensive applications, which translates into lower heat generation and improved performance sustainability.