Infineon OptiMOS 3 Type N-Channel MOSFET, 25 A, 250 V Enhancement, 3-Pin TO-263

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15 366,00 kr

(exkl. moms)

19 208,00 kr

(inkl. moms)

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RS-artikelnummer:
124-8755
Tillv. art.nr:
IPB600N25N3GATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

250V

Series

OptiMOS 3

Package Type

TO-263

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

60mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Typical Gate Charge Qg @ Vgs

22nC

Maximum Gate Source Voltage Vgs

20 V

Maximum Power Dissipation Pd

136W

Forward Voltage Vf

1V

Maximum Operating Temperature

175°C

Standards/Approvals

No

Length

10.31mm

Height

4.57mm

Width

9.45 mm

Automotive Standard

No

COO (Country of Origin):
CN

Infineon OptiMOS™3 Power MOSFETs, 100V and over


MOSFET Transistors, Infineon


Infineon offers a large and comprehensive portfolio of MOSFET devices which includes the CoolMOS, OptiMOS and StrongIRFET families. They deliver best-in-class performance to bring more efficiency, power density and cost effectiveness. Designs requiring high quality and enhanced protection features benefit from AEC-Q101 industry standards Automotive qualified MOSFETs.

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