Infineon OptiMOS 3 Type N-Channel MOSFET, 64 A, 250 V Enhancement, 3-Pin TO-263

RS-artikelnummer:: 165-8068
Tillv. art.nr:: IPB200N25N3GATMA1
Tillverkare / varumärke:: Infineon

Infineon OptiMOS 3 Type N-Channel MOSFET, 64 A, 250 V Enhancement, 3-Pin TO-263

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RS-artikelnummer:: 165-8068
Tillv. art.nr:: IPB200N25N3GATMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	64A
	Maximum Drain Source Voltage Vds	250V
	Package Type	TO-263
	Series	OptiMOS 3
	Mount Type	Surface
	Pin Count	3
	Maximum Drain Source Resistance Rds	20mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	300W
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	64nC
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Height	4.57mm
	Standards/Approvals	No
	Length	10.31mm
	Width	9.45 mm
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 64A
	Maximum Drain Source Voltage Vds 250V
	Package Type TO-263
	Series OptiMOS 3
	Mount Type Surface
	Pin Count 3
	Maximum Drain Source Resistance Rds 20mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 300W
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 64nC
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Height 4.57mm
	Standards/Approvals No
	Length 10.31mm
	Width 9.45 mm
	Automotive Standard No

RoHS-status: Inte relevant

COO (Country of Origin):: CN

Infineon OptiMOS™ 3 Series MOSFET, 64A Maximum Continuous Drain Current, 300W Maximum Power Dissipation - IPB200N25N3GATMA1

This N-channel MOSFET is designed for efficient power management in various electronic applications, featuring a maximum continuous drain current of 64A and a voltage rating of 250V. Its robust thermal performance and low on-resistance contribute to effective electrical performance across a wide temperature range, making it suitable for high-frequency switching and synchronous rectification.

Features & Benefits

• Optimal gate charge x RDS(on) product enhances efficiency

• Low on-resistance minimises power loss during operation

• Operational temperature up to +175°C accommodates diverse applications

• Complies with RoHS and halogen-free standards for eco-friendly use

• Compact D2PAK design and surface mount facilitate integration

• Qualified according to JEDEC for reliability in target applications

Applications

• Used in power supplies for automation systems

• Appropriate for high-efficiency converters in renewable energy

• Employed in motor control for industrial machinery

• Ideal for synchronous rectification in desktop power supplies

• Applied in electric vehicles for effective energy management

What measures should be taken to ensure optimal performance during installation?

It is important to maintain an effective thermal management system to dissipate heat, ensuring the device operates within its specified temperature limits.

Can this component be used in applications requiring Rapid switching?

Yes, it is suitable for high-frequency applications such as DC-DC converters and drivers due to its fast switching capabilities.

Is there a specific circuit design recommended for optimal use?

A proper gate driver circuit can enhance performance, particularly in terms of turn-on and turn-off times, which helps reduce switching losses.

What should be considered regarding environmental conditions during operation?

Ensure it is placed in an environment where temperatures remain within its operational limits of -55°C to +175°C to prevent thermal degradation.

How does this MOSFET perform under heavy load conditions?

It efficiently handles a continuous drain current of 64A while maintaining low on-resistance, thus reducing overheating and improving reliability under load.