ROHM RH7G04CBJFRA Type P-Channel Single MOSFETs, -40 V Enhancement, 8-Pin DFN3333T8LSAB RH7G04CBJFRATCB

RS-artikelnummer:: 687-463
Tillv. art.nr:: RH7G04CBJFRATCB
Tillverkare / varumärke:: ROHM

ROHM RH7G04CBJFRA Type P-Channel Single MOSFETs, -40 V Enhancement, 8-Pin DFN3333T8LSAB RH7G04CBJFRATCB

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Antal (1 längd med 2 enheter)*

17,95 kr

(exkl. moms)

22,438 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Leverans från den 20 januari 2026

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Enheter	Per enhet	Per Längd*
2 - 18	8,975 kr	17,95 kr
20 - 48	7,925 kr	15,85 kr
50 - 198	7,075 kr	14,15 kr
200 - 998	5,70 kr	11,40 kr
1000 +	5,57 kr	11,14 kr

*vägledande pris

RS-artikelnummer:: 687-463
Tillv. art.nr:: RH7G04CBJFRATCB
Tillverkare / varumärke:: ROHM

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	ROHM
	Product Type	Single MOSFETs
	Channel Type	Type P
	Maximum Drain Source Voltage Vds	-40V
	Series	RH7G04CBJFRA
	Package Type	DFN3333T8LSAB
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	17.7mΩ
	Channel Mode	Enhancement
	Typical Gate Charge Qg @ Vgs	33nC
	Maximum Power Dissipation Pd	62W
	Maximum Gate Source Voltage Vgs	5 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Standards/Approvals	RoHS
	Height	1.1mm
	Length	3.4mm
	Width	3.4 mm
	Automotive Standard	AEC-Q101

	Välj alla
	Brand ROHM
	Product Type Single MOSFETs
	Channel Type Type P
	Maximum Drain Source Voltage Vds -40V
	Series RH7G04CBJFRA
	Package Type DFN3333T8LSAB
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 17.7mΩ
	Channel Mode Enhancement
	Typical Gate Charge Qg @ Vgs 33nC
	Maximum Power Dissipation Pd 62W
	Maximum Gate Source Voltage Vgs 5 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Standards/Approvals RoHS
	Height 1.1mm
	Length 3.4mm
	Width 3.4 mm
	Automotive Standard AEC-Q101

Datasheet - RH7G04CBJFRATCB

COO (Country of Origin):: JP

The ROHM Power MOSFET designed to deliver exceptional performance in demanding applications. This component is specifically engineered for high-efficiency switching, making it ideal for automotive, lighting, and other high-reliability systems. With its robust thermal characteristics, including a maximum power dissipation of 62W and an impressive ±40A continuous drain current, the RH7G04CBJFRA ensures reliable operation under various conditions. Furthermore, this MOSFET integrates advanced features such as avalanche testing and AEC-Q101 qualification, guaranteeing safety and durability in critical environments.

Features a low on-state resistance of 17.7mΩ for improved efficiency

Delivers a maximum pulsed drain current of ±80A, enabling high-performance applications

Utilises wettable flanks for enhanced solder joint reliability

Offers robust thermal resistance to maintain performance under heavy loads

Operates effectively across a wide temperature range of -55 to +175°C

Includes a 100% avalanche test specification for increased safety

Employed in a variety of applications including ADAS and automotive lighting

Comes with detailed packaging specifications for user-friendly integration

ROHM RH7G04CBJFRA Type P-Channel Single MOSFETs, -40 V Enhancement, 8-Pin DFN3333T8LSAB RH7G04CBJFRATCB

GRATIS leverans för online beställningar över 500,00 kr

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