Microchip N-Channel DMOS FET-Channel Single MOSFETs, 350 mA, 9 V Depletion Mode, 5-Pin SOT-23-5 LND150N3-G-P003

Se alla MOSFETs

Antal (1 rulle med 2000 enheter)*

14 384,00 kr

(exkl. moms)

17 980,00 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
Tillfälligt slut
  • Leverans från den 23 februari 2026
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
Per rulle*
2000 +7,192 kr14 384,00 kr

*vägledande pris

RS-artikelnummer:
599-150
Tillv. art.nr:
LND150N3-G-P003
Tillverkare / varumärke:
Microchip
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Microchip

Channel Type

N-Channel DMOS FET

Product Type

Single MOSFETs

Maximum Continuous Drain Current Id

350mA

Maximum Drain Source Voltage Vds

9V

Package Type

SOT-23-5

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

1.4Ω

Channel Mode

Depletion Mode

Forward Voltage Vf

1.8V

Maximum Power Dissipation Pd

360mW

Maximum Gate Source Voltage Vgs

12 V

Minimum Operating Temperature

-25°C

Maximum Operating Temperature

125°C

Standards/Approvals

ISO/TS‑16949, RoHS

Height

1.3mm

Length

3.05mm

Width

1.75 mm

Automotive Standard

No

COO (Country of Origin):
PH
The Microchip High voltage N-channel depletion mode (normally-on) transistor utilizing lateral DMOS technology. The gate is ESD protected. The LND150 is ideal for high voltage applications in the areas of normally-on switches, precision constant current sources, voltage ramp generation and amplification.

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Excellent thermal stability

Integral source drain diode

High input impedance and low CISS

ESD gate protection

relaterade länkar