Infineon IGLT65 Type N-Channel MOSFET, 15 A, 650 V Enhancement, 16-Pin PG-HDSOP-16 IGLT65R110D2ATMA1

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88,70 kr

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110,88 kr

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2 - 1844,35 kr88,70 kr
20 - 19839,985 kr79,97 kr
200 - 99836,85 kr73,70 kr
1000 - 199834,16 kr68,32 kr
2000 +30,63 kr61,26 kr

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RS-artikelnummer:
351-885
Tillv. art.nr:
IGLT65R110D2ATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

15A

Maximum Drain Source Voltage Vds

650V

Series

IGLT65

Package Type

PG-HDSOP-16

Mount Type

Surface

Pin Count

16

Maximum Drain Source Resistance Rds

0.14Ω

Channel Mode

Enhancement

Maximum Power Dissipation Pd

55W

Typical Gate Charge Qg @ Vgs

2.4nC

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

10 V

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC for Industrial Applications

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled TOLT package, it is designed for optimal power dissipation in various industrial applications.

650 V e-mode power transistor

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

Low dynamic RDS(on)

High ESD robustness: 2 kV HBM - 1 kV CDM

Top-side cooled package

JEDEC qualified (JESD47, JESD22)

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