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Infineon IGOT65 Type N-Channel MOSFET, 34 A, 650 V Enhancement, 20-Pin PG-DSO-20 IGOT65R045D2AUMA1

RS-artikelnummer:: 351-880
Tillv. art.nr:: IGOT65R045D2AUMA1
Tillverkare / varumärke:: Infineon

Infineon IGOT65 Type N-Channel MOSFET, 34 A, 650 V Enhancement, 20-Pin PG-DSO-20 IGOT65R045D2AUMA1

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Antal (1 enhet)*

112,94 kr

(exkl. moms)

141,18 kr

(inkl. moms)

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Enheter	Per enhet
1 - 9	112,94 kr
10 - 99	101,58 kr
100 - 499	93,63 kr
500 - 999	87,02 kr
1000 +	77,95 kr

*vägledande pris

RS-artikelnummer:: 351-880
Tillv. art.nr:: IGOT65R045D2AUMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	34A
	Maximum Drain Source Voltage Vds	650V
	Series	IGOT65
	Package Type	PG-DSO-20
	Mount Type	Surface
	Pin Count	20
	Maximum Drain Source Resistance Rds	0.054Ω
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	109W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	6nC
	Maximum Gate Source Voltage Vgs	±10 V
	Maximum Operating Temperature	150°C
	Standards/Approvals	JEDEC
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 34A
	Maximum Drain Source Voltage Vds 650V
	Series IGOT65
	Package Type PG-DSO-20
	Mount Type Surface
	Pin Count 20
	Maximum Drain Source Resistance Rds 0.054Ω
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 109W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 6nC
	Maximum Gate Source Voltage Vgs ±10 V
	Maximum Operating Temperature 150°C
	Standards/Approvals JEDEC
	Automotive Standard No

Datasheet - IGOT65R045D2AUMA1

COO (Country of Origin):: ID

The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a top-side cooled DSO package, it is designed for optimal power dissipation in various industrial applications.

650 V e-mode power transistor

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

Low dynamic RDS(on)

High ESD robustness: 2 kV HBM - 1 kV CDM

Top-side cooled package

JEDEC qualified (JESD47, JESD22)

Infineon IGOT65 Type N-Channel MOSFET, 34 A, 650 V Enhancement, 20-Pin PG-DSO-20 IGOT65R045D2AUMA1

GRATIS leverans för online beställningar över 500,00 kr

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