Infineon IGLR65 Type N-Channel MOSFET, 9.2 A, 650 V Enhancement, 8-Pin PG-TSON-8 IGLR65R200D2XUMA1

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123,78 kr

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154,725 kr

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5 - 4524,756 kr123,78 kr
50 - 9523,52 kr117,60 kr
100 - 49521,772 kr108,86 kr
500 - 99520,048 kr100,24 kr
1000 +19,286 kr96,43 kr

*vägledande pris

RS-artikelnummer:
351-877
Tillv. art.nr:
IGLR65R200D2XUMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

9.2A

Maximum Drain Source Voltage Vds

650V

Series

IGLR65

Package Type

PG-TSON-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.24Ω

Channel Mode

Enhancement

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

10 V

Maximum Power Dissipation Pd

34W

Typical Gate Charge Qg @ Vgs

1.26nC

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC for Industrial Applications

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer applications with slim form factors.

650 V e-mode power transistor

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

Low dynamic RDS(on)

High ESD robustness: 2 kV HBM - 1 kV CDM

Bottom-side cooled package

JEDEC qualified (JESD47, JESD22)

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