Infineon IGLR65 Type N-Channel MOSFET, 13 A, 650 V Enhancement, 8-Pin PG-TSON-8 IGLR65R140D2XUMA1

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50 - 9535,772 kr178,86 kr
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RS-artikelnummer:
351-876
Tillv. art.nr:
IGLR65R140D2XUMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

13A

Maximum Drain Source Voltage Vds

650V

Package Type

PG-TSON-8

Series

IGLR65

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.17Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

1.8nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

47W

Maximum Gate Source Voltage Vgs

25 V

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC for Industrial Applications

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer and industrial applications with slim form factors.

650 V e-mode power transistor

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge, low output charge

Superior commutation ruggedness

Low dynamic RDS(on)

High ESD robustness: 2 kV HBM - 1 kV CDM

Bottom-side cooled package

JEDEC qualified (JESD47, JESD22)

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