Infineon IGLR65 Type N-Channel MOSFET, 7.2 A, 650 V Enhancement, 8-Pin PG-TSON-8 IGLR65R270D2XUMA1

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103,02 kr

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128,775 kr

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5 - 4520,604 kr103,02 kr
50 - 9519,556 kr97,78 kr
100 - 49518,144 kr90,72 kr
500 - 99516,71 kr83,55 kr
1000 +16,06 kr80,30 kr

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RS-artikelnummer:
351-874
Tillv. art.nr:
IGLR65R270D2XUMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

7.2A

Maximum Drain Source Voltage Vds

650V

Series

IGLR65

Package Type

PG-TSON-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

0.33Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

1nC

Maximum Gate Source Voltage Vgs

10 V

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

28W

Maximum Operating Temperature

150°C

Standards/Approvals

JEDEC for Industrial Applications

Automotive Standard

No

COO (Country of Origin):
MY
The Infineon GaN power transistor allows for increased efficiency at high-frequency operation. As part of the CoolGaN 650 V G5 family, it meets the highest quality standards, enabling highly reliable designs with superior efficiency. Housed in a bottom-side cooled ThinPAK package, it is well-suited for consumer applications with slim form factors.

650 V e-mode power transistor

Ultrafast switching

No reverse-recovery charge

Capable of reverse conduction

Low gate charge and low output charge

Superior commutation ruggedness

Low dynamic RDS(on)

High ESD robustness: 2 kV HBM - 1 kV CDM

Bottom-side cooled package

JEDEC qualified (JESD47, JESD22)

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