Infineon CoolSiC Type N-Channel MOSFET, 89 A, 750 V Enhancement, 4-Pin PG-TO247-4 IMZA75R016M1HXKSA1
- RS-artikelnummer:
- 349-339
- Tillv. art.nr:
- IMZA75R016M1HXKSA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 enhet)*
321,16 kr
(exkl. moms)
401,45 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 240 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter | Per enhet |
|---|---|
| 1 - 9 | 321,16 kr |
| 10 - 99 | 289,07 kr |
| 100 + | 266,56 kr |
*vägledande pris
- RS-artikelnummer:
- 349-339
- Tillv. art.nr:
- IMZA75R016M1HXKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 89A | |
| Maximum Drain Source Voltage Vds | 750V | |
| Series | CoolSiC | |
| Package Type | PG-TO247-4 | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 22mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 81nC | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Power Dissipation Pd | 319W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 89A | ||
Maximum Drain Source Voltage Vds 750V | ||
Series CoolSiC | ||
Package Type PG-TO247-4 | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 22mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 81nC | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Power Dissipation Pd 319W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- CN
The Infineon 750 V CoolSiC Power Device G1 is built on Infineon’s solid silicon carbide technology, developed over more than 20 years. By leveraging the unique characteristics of wide bandgap SiC materials, the 750 V CoolSiC MOSFET delivers a unique combination of performance, reliability, and ease of use. It is specifically designed for high temperature and harsh operating conditions, enabling the simplified and cost effective deployment of systems with the highest efficiency. This MOSFET is perfect for applications requiring robust performance and energy efficient solutions.
Enhanced robustness and reliability for bus voltages beyond 500 V
Superior efficiency in hard switching
Higher switching frequency in soft switching topologies
Robustness against parasitic turn on for unipolar gate driving
Reduced switching losses through improved gate control
relaterade länkar
- Infineon CoolSiC Type N-Channel MOSFET 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R016M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R020M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R040M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R140M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 750 V Enhancement, 4-Pin PG-TO247-4 IMZA75R090M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 750 V Enhancement, 4-Pin PG-TO247-4 IMZA75R027M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 750 V Enhancement, 4-Pin PG-TO247-4 IMZA75R140M1HXKSA1
- Infineon CoolSiC Type N-Channel MOSFET 750 V Enhancement, 4-Pin PG-TO247-4 AIMZA75R027M1HXKSA1