Infineon Type N-Channel MOSFET, 280 A, 1200 V Enhancement FF3MR12KM1HPHPSA1

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7 566,00 kr

(exkl. moms)

9 457,50 kr

(inkl. moms)

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RS-artikelnummer:
349-316
Tillv. art.nr:
FF3MR12KM1HPHPSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

280A

Maximum Drain Source Voltage Vds

1200V

Mount Type

Screw

Maximum Drain Source Resistance Rds

6.32mΩ

Channel Mode

Enhancement

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

23 V

Forward Voltage Vf

5.59V

Maximum Operating Temperature

175°C

Standards/Approvals

60749, 60068, IEC 60747

Automotive Standard

No

COO (Country of Origin):
HU
The Infineon 62 mm CoolSiC MOSFET Half-Bridge Module is designed in the well-known 62 mm housing, integrating M1H chip technology for high performance power applications. This module offers high current density, making it ideal for space-constrained systems that require robust performance. With low switching losses, it ensures greater efficiency at high switching frequencies. The superior gate oxide reliability enhances durability, extending the module’s operational life in demanding conditions.

Minimizes cooling efforts

Reduction in volume and size

Reduced system costs

Symmetrical module design

Standard construction technique

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