Infineon Type N-Channel MOSFET, 185 A, 1200 V Enhancement FF3MR12KM1HHPSA1

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7 455,02 kr

(exkl. moms)

9 318,78 kr

(inkl. moms)

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RS-artikelnummer:
349-315
Tillv. art.nr:
FF3MR12KM1HHPSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

185A

Maximum Drain Source Voltage Vds

1200V

Mount Type

Screw

Maximum Drain Source Resistance Rds

6.32mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

23 V

Minimum Operating Temperature

-40°C

Forward Voltage Vf

5.59V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 60747, IEC 60749, IEC 60068

Automotive Standard

No

COO (Country of Origin):
HU
The Infineon 62 mm CoolSiC MOSFET Half-Bridge Module is housed in the well-known 62 mm packaging, combining the latest M1H chip technology for optimal performance. This module delivers high current density, making it ideal for applications that require compact yet powerful solutions. It offers low switching losses, ensuring efficient operation even at high frequencies, and features superior gate oxide reliability for enhanced durability over time.

Minimizes cooling efforts

Reduction in volume and size

Reduced system costs

Symmetrical module design

Standard construction technique

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