Infineon CoolSiC Trench MOSFET Type N-Channel MOSFET, 150 A, 1200 V Enhancement EasyDUAL FF6MR12W2M1HPB11BPSA1

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4 018,10 kr

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5 022,62 kr

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RS-artikelnummer:
348-978
Tillv. art.nr:
FF6MR12W2M1HPB11BPSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

150A

Maximum Drain Source Voltage Vds

1200V

Package Type

EasyDUAL

Series

CoolSiC Trench MOSFET

Mount Type

Screw

Maximum Drain Source Resistance Rds

11.6mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

23 V

Minimum Operating Temperature

-40°C

Forward Voltage Vf

5.35V

Maximum Power Dissipation Pd

20mW

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 60747, IEC 60749, IEC 60068

Automotive Standard

No

COO (Country of Origin):
DE
The Infineon EasyDUAL 2B CoolSiC MOSFET Half-Bridge Module is designed to deliver high performance power solutions with best-in-class packaging, featuring a compact 12 mm height for efficient space utilization. The module incorporates leading-edge Wide Bandgap (WBG) materials, providing superior efficiency, reliability, and thermal performance. With very low module stray inductance, it ensures minimized power losses and enhanced switching dynamics. The module is powered by the Enhanced CoolSiC MOSFET Gen 1, offering improved thermal management and efficiency, making it ideal for demanding power applications.

Outstanding module efficiency

System cost advantages

System efficiency improvement

Reduced cooling requirements

Enabling higher frequency

Increase of power density

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