Infineon CoolSiC Type N-Channel MOSFET, 26 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14 IMYH200R100M1HXKSA1
- RS-artikelnummer:
- 349-114
- Tillv. art.nr:
- IMYH200R100M1HXKSA1
- Tillverkare / varumärke:
- Infineon
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275,25 kr
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344,06 kr
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Enheter | Per enhet |
|---|---|
| 1 - 9 | 275,25 kr |
| 10 - 99 | 247,63 kr |
| 100 + | 228,37 kr |
*vägledande pris
- RS-artikelnummer:
- 349-114
- Tillv. art.nr:
- IMYH200R100M1HXKSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 26A | |
| Maximum Drain Source Voltage Vds | 2000V | |
| Package Type | PG-TO-247-4-PLUS-NT14 | |
| Series | CoolSiC | |
| Mount Type | Through Hole | |
| Pin Count | 4 | |
| Maximum Drain Source Resistance Rds | 142mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Maximum Power Dissipation Pd | 217W | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 26A | ||
Maximum Drain Source Voltage Vds 2000V | ||
Package Type PG-TO-247-4-PLUS-NT14 | ||
Series CoolSiC | ||
Mount Type Through Hole | ||
Pin Count 4 | ||
Maximum Drain Source Resistance Rds 142mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Maximum Power Dissipation Pd 217W | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- MY
The Infineon CoolSiC 2000 V SiC Trench MOSFET is a high performance silicon carbide MOSFET featuring .XT interconnection technology for enhanced thermal and electrical performance. With a benchmark gate threshold voltage (VGS(th)) of 4.5 V, it offers reliable and efficient switching, making it ideal for high voltage power applications. This MOSFET delivers superior performance, ensuring excellent efficiency and robust operation even in demanding environments.
Very low switching losses
Robust body diode for hard commutation
RoHS compliant
Halogen free
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