Infineon CoolSiC 2000 V SiC Trench MOSFET Type N-Channel MOSFET, 89 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14

RS-artikelnummer:: 284-862
Tillv. art.nr:: IMYH200R024M1HXKSA1
Tillverkare / varumärke:: Infineon

Infineon CoolSiC 2000 V SiC Trench MOSFET Type N-Channel MOSFET, 89 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14

Antal (1 rör med 30 enheter)*

27 246,18 kr

(exkl. moms)

34 057,74 kr

(inkl. moms)

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RS-artikelnummer:: 284-862
Tillv. art.nr:: IMYH200R024M1HXKSA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Channel Type	Type N
	Product Type	MOSFET
	Maximum Continuous Drain Current Id	89A
	Maximum Drain Source Voltage Vds	2000V
	Series	CoolSiC 2000 V SiC Trench MOSFET
	Package Type	PG-TO-247-4-PLUS-NT14
	Mount Type	Through Hole
	Pin Count	4
	Maximum Drain Source Resistance Rds	35mΩ
	Channel Mode	Enhancement
	Maximum Gate Source Voltage Vgs	20 V
	Maximum Power Dissipation Pd	576W
	Minimum Operating Temperature	-55°C
	Typical Gate Charge Qg @ Vgs	137nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Channel Type Type N
	Product Type MOSFET
	Maximum Continuous Drain Current Id 89A
	Maximum Drain Source Voltage Vds 2000V
	Series CoolSiC 2000 V SiC Trench MOSFET
	Package Type PG-TO-247-4-PLUS-NT14
	Mount Type Through Hole
	Pin Count 4
	Maximum Drain Source Resistance Rds 35mΩ
	Channel Mode Enhancement
	Maximum Gate Source Voltage Vgs 20 V
	Maximum Power Dissipation Pd 576W
	Minimum Operating Temperature -55°C
	Typical Gate Charge Qg @ Vgs 137nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Automotive Standard No

Datasheet - IMYH200R024M1HXKSA1

COO (Country of Origin):: MY

The Infineon CoolSiC 2000 V SiC Trench MOSFET represents a cutting edge solution designed for high performance applications. Engineered with Advanced .XT interconnection technology, it ensures optimal thermal management and efficiency, making it Ideal for demanding environments. With a robust body diode, the MOSFET excels under hard commutation conditions, providing reliable operation in various applications including string inverters and EV charging systems. Its impressive specifications, including a continuous drain current of up to 89 A, underscore its capability to handle significant power loads, while its low switching losses contribute to overall system efficiency. This device has been rigorously validated for industrial applications, ensuring adherence to industry standards and reliability.

Operates at high voltage of 2000 V

Very low on state resistance for efficiency

Benchmark gate threshold voltage for performance

Robust operation with well designed body diode

Validated for industrial use via JEDEC testing

Supports optimal thermal performance through design

Infineon CoolSiC 2000 V SiC Trench MOSFET Type N-Channel MOSFET, 89 A, 2000 V Enhancement, 4-Pin PG-TO-247-4-PLUS-NT14

GRATIS leverans för online beställningar över 500,00 kr

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