Infineon F4-8MR12W2M1H_B70 Type N-Channel MOSFET, 100 A, 1200 V Enhancement EasyPACK F48MR12W2M1HB70BPSA1

Se alla MOSFETs

Antal (1 enhet)*

4 941,79 kr

(exkl. moms)

6 177,24 kr

(inkl. moms)

Add to Basket
välj eller skriv kvantitet
I lager
  • 15 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Enheter
Per enhet
1 +4 941,79 kr

*vägledande pris

RS-artikelnummer:
348-969
Tillv. art.nr:
F48MR12W2M1HB70BPSA1
Tillverkare / varumärke:
Infineon
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla

Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

100A

Maximum Drain Source Voltage Vds

1200V

Series

F4-8MR12W2M1H_B70

Package Type

EasyPACK

Mount Type

Screw

Maximum Drain Source Resistance Rds

15.1mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

20mW

Forward Voltage Vf

5.35V

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

23 V

Maximum Operating Temperature

150°C

Standards/Approvals

IEC 60747, 60068, 60749

Automotive Standard

No

COO (Country of Origin):
DE
The Infineon EasyPACK 2B CoolSiC MOSFET fourpack module 1200 V, 8 mΩ G1 with NTC, PressFIT contact technology and aluminium nitride ceramic. This MOSFET offers best-in-class packaging with a compact 12 mm height, optimizing both space and performance. It features leading-edge Wide Bandgap (WBG) materials, providing superior efficiency and power handling. The design incorporates very low module stray inductance, minimizing power losses and improving switching dynamics. Powered by the Enhanced CoolSiC MOSFET Gen 1, it delivers excellent thermal performance and reliability.

Outstanding module efficiency

System cost advantages

System efficiency improvement

Reduced cooling requirements

Enabling higher frequency

Increase of power density

relaterade länkar