Infineon F4-17MR12W1M1HP_B76 Type N-Channel MOSFET, 25 A, 1200 V Enhancement EasyPACK F433MR12W1M1HB76BPSA1

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1 393,32 kr

(exkl. moms)

1 741,65 kr

(inkl. moms)

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RS-artikelnummer:
348-968
Tillv. art.nr:
F433MR12W1M1HB76BPSA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

25A

Maximum Drain Source Voltage Vds

1200V

Package Type

EasyPACK

Series

F4-17MR12W1M1HP_B76

Mount Type

Screw

Maximum Drain Source Resistance Rds

69.4mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

20mW

Forward Voltage Vf

5.35V

Minimum Operating Temperature

-40°C

Maximum Gate Source Voltage Vgs

23 V

Maximum Operating Temperature

175°C

Standards/Approvals

IEC 60068, IEC 60747, IEC 60749

Automotive Standard

No

COO (Country of Origin):
DE
The Infineon EasyPACK 1B CoolSiC MOSFET fourpack module 1200 V, 33 mΩ G1 with NTC and PressFIT contact technology. This MOSFET features best-in-class packaging with a compact 12 mm height, enabling efficient space utilization without compromising performance. It incorporates leading-edge Wide Bandgap (WBG) materials, ensuring improved efficiency and enhanced power handling capabilities. The design also boasts very low module stray inductance, which reduces power loss and optimizes switching performance.

Outstanding module efficiency

System cost advantages

System efficiency improvement

Reduced cooling requirements

Enabling higher frequency

Increase of power density

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