Infineon F4-17MR12W1M1HP_B76 Type N-Channel MOSFET, 45 A, 1200 V Enhancement EasyPACK F417MR12W1M1HPB76BPSA1
- RS-artikelnummer:
- 348-966
- Tillv. art.nr:
- F417MR12W1M1HPB76BPSA1
- Tillverkare / varumärke:
- Infineon
Antal (1 enhet)*
2 459,71 kr
(exkl. moms)
3 074,64 kr
(inkl. moms)
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Enheter | Per enhet |
|---|---|
| 1 + | 2 459,71 kr |
*vägledande pris
- RS-artikelnummer:
- 348-966
- Tillv. art.nr:
- F417MR12W1M1HPB76BPSA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 45A | |
| Maximum Drain Source Voltage Vds | 1200V | |
| Package Type | EasyPACK | |
| Series | F4-17MR12W1M1HP_B76 | |
| Mount Type | Screw | |
| Maximum Drain Source Resistance Rds | 34.7mΩ | |
| Channel Mode | Enhancement | |
| Forward Voltage Vf | 5.35V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Power Dissipation Pd | 20mW | |
| Maximum Gate Source Voltage Vgs | 23 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | IEC 60749, IEC 60068, IEC 60747 | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 45A | ||
Maximum Drain Source Voltage Vds 1200V | ||
Package Type EasyPACK | ||
Series F4-17MR12W1M1HP_B76 | ||
Mount Type Screw | ||
Maximum Drain Source Resistance Rds 34.7mΩ | ||
Channel Mode Enhancement | ||
Forward Voltage Vf 5.35V | ||
Minimum Operating Temperature -40°C | ||
Maximum Power Dissipation Pd 20mW | ||
Maximum Gate Source Voltage Vgs 23 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals IEC 60749, IEC 60068, IEC 60747 | ||
Automotive Standard No | ||
- COO (Country of Origin):
- DE
The Infineon EasyPACK 1B CoolSiC MOSFET fourpack module 1200 V, 17 mΩ G1 with NTC, pre-applied thermal interface material and PressFIT contact technology. This MOSFET is built with best-in-class packaging, featuring a compact 12 mm height for efficient integration. It utilizes leading edge Wide Bandgap materials, which enhance performance and energy efficiency. The design offers very low module stray inductance, reducing power losses and improving switching characteristics. Powered by the Enhanced CoolSiC MOSFET Gen 1, it provides superior thermal performance and reliability.
Outstanding module efficiency
System cost advantages
System efficiency improvement
Reduced cooling requirements
Enabling higher frequency
Increase of power density
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