onsemi EliteSiC Type N-Channel MOSFET, 55 A, 650 V N, 8-Pin HPSOF-8L NTBL032N065M3S
- RS-artikelnummer:
- 333-416
- Tillv. art.nr:
- NTBL032N065M3S
- Tillverkare / varumärke:
- onsemi
Mängdrabatt möjlig
Antal (1 längd med 1 enhet)*
86,02 kr
(exkl. moms)
107,52 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
I lager
- 1 990 enhet(er) är redo att levereras
Behöver du mer? Ange den kvantitet du behöver och klicka på "Kontrollera leveransdatum"
Längd(er) | Per Längd |
|---|---|
| 1 - 9 | 86,02 kr |
| 10 - 99 | 77,50 kr |
| 100 - 499 | 71,46 kr |
| 500 - 999 | 66,30 kr |
| 1000 + | 53,87 kr |
*vägledande pris
- RS-artikelnummer:
- 333-416
- Tillv. art.nr:
- NTBL032N065M3S
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 55A | |
| Maximum Drain Source Voltage Vds | 650V | |
| Package Type | HPSOF-8L | |
| Series | EliteSiC | |
| Pin Count | 8 | |
| Channel Mode | N | |
| Maximum Gate Source Voltage Vgs | 22 V | |
| Maximum Power Dissipation Pd | 227W | |
| Forward Voltage Vf | 6V | |
| Typical Gate Charge Qg @ Vgs | 55nC | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS with exemption 7a, Halide Free, Pb-Free | |
| Height | 2.3mm | |
| Length | 9.9mm | |
| Width | 10.38 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 55A | ||
Maximum Drain Source Voltage Vds 650V | ||
Package Type HPSOF-8L | ||
Series EliteSiC | ||
Pin Count 8 | ||
Channel Mode N | ||
Maximum Gate Source Voltage Vgs 22 V | ||
Maximum Power Dissipation Pd 227W | ||
Forward Voltage Vf 6V | ||
Typical Gate Charge Qg @ Vgs 55nC | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS with exemption 7a, Halide Free, Pb-Free | ||
Height 2.3mm | ||
Length 9.9mm | ||
Width 10.38 mm | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The ON Semiconductor SiC MOSFET designed for efficient power switching, offering low conduction losses and enhanced thermal performance. Its compact structure ensures reliable operation in high-power applications while minimizing space requirements. This device is optimized for energy efficiency, reducing overall system power dissipation.
H PSOF8L package
RoHS compliant
Pb free
relaterade länkar
- onsemi EliteSiC Type N-Channel MOSFET 650 V N, 8-Pin HPSOF-8L NTBL023N065M3S
- onsemi NTBL Type N-Channel MOSFET 650 V Enhancement, 8-Pin HPSOF-8L NTBL060N065SC1
- onsemi NTBL Type N-Channel MOSFET 650 V Enhancement, 8-Pin HPSOF-8L NTBL075N065SC1
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin HPSOF-8L
- onsemi NTB Type N-Channel MOSFET 1200 V Enhancement, 7-Pin HPSOF-8L NTBL045N065SC1
- onsemi SiC Power Type N-Channel MOSFET 650 V N, 4-Pin TO-247
- onsemi SiC Power Type N-Channel MOSFET 650 V N, 4-Pin TO-247 NTH4L045N065SC1
- onsemi EliteSiC Type N-Channel MOSFET 1700 V Enhancement, 4-Pin TO-247-4L NVH4L050N170M1