Infineon OptiMOS Power Transistor Type P-Channel MOSFET, -19.6 A, 60 V Enhancement, 8-Pin PG-TDSON-8 ISC800P06LMATMA1

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RS-artikelnummer:
285-057
Tillv. art.nr:
ISC800P06LMATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type P

Maximum Continuous Drain Current Id

-19.6A

Maximum Drain Source Voltage Vds

60V

Package Type

PG-TDSON-8

Series

OptiMOS Power Transistor

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

80mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

83W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon MOSFET features an OptiMOS power transistor redefines efficiency with its superior P channel technology designed for high performance applications. Boasting a breakdown voltage of 60V, it is engineered for robust industrial use, ensuring reliable performance under varying operational conditions. The unique SuperSO8 package facilitates an optimal thermal path for heat dissipation, enhancing the reliability and lifespan of the device. This transistor undergoes rigorous testing, including 100% avalanche testing, ensuring that it meets the highest standards of reliability and quality. With an industry leading low on resistance, it significantly reduces power losses, making it an excellent choice for energy conscious designs.

Very low on resistance improves efficiency

100% avalanche tested for reliability

Pb free lead plating for compliance

Halogen free construction supports eco friendliness

Logic level operation for easy interfacing

Suitable for diverse industrial applications

Excellent thermal characteristics ensure reliability

Enhancement mode design for stable performance

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