Infineon OptiMOS Type N-Channel MOSFET, 323 A, 80 V Enhancement, 9-Pin PG-TTFN-9 IQD016N08NM5CGATMA1

RS-artikelnummer:: 284-932
Tillv. art.nr:: IQD016N08NM5CGATMA1
Tillverkare / varumärke:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 323 A, 80 V Enhancement, 9-Pin PG-TTFN-9 IQD016N08NM5CGATMA1

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Antal (1 förpackning med 2 enheter)*

89,87 kr

(exkl. moms)

112,338 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

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Enheter	Per enhet	Per förpackning*
2 - 18	44,935 kr	89,87 kr
20 - 198	40,43 kr	80,86 kr
200 - 998	37,295 kr	74,59 kr
1000 - 1998	34,61 kr	69,22 kr
2000 +	31,025 kr	62,05 kr

*vägledande pris

RS-artikelnummer:: 284-932
Tillv. art.nr:: IQD016N08NM5CGATMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	323A
	Maximum Drain Source Voltage Vds	80V
	Series	OptiMOS
	Package Type	PG-TTFN-9
	Mount Type	Surface
	Pin Count	9
	Maximum Drain Source Resistance Rds	1.57mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	333W
	Typical Gate Charge Qg @ Vgs	106nC
	Maximum Gate Source Voltage Vgs	20 V
	Minimum Operating Temperature	-55°C
	Forward Voltage Vf	1V
	Maximum Operating Temperature	175°C
	Standards/Approvals	JEDEC, RoHS, IEC61249-2-21
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 323A
	Maximum Drain Source Voltage Vds 80V
	Series OptiMOS
	Package Type PG-TTFN-9
	Mount Type Surface
	Pin Count 9
	Maximum Drain Source Resistance Rds 1.57mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 333W
	Typical Gate Charge Qg @ Vgs 106nC
	Maximum Gate Source Voltage Vgs 20 V
	Minimum Operating Temperature -55°C
	Forward Voltage Vf 1V
	Maximum Operating Temperature 175°C
	Standards/Approvals JEDEC, RoHS, IEC61249-2-21
	Automotive Standard No

Datasheet - IQD016N08NM5CGATMA1

The Infineon MOSFET features an OptiMOS 5 Power Transistor is engineered to deliver exceptional performance with its Advanced N channel design. This robust component is ideally suited for applications where high efficiency and low on resistance are paramount. Operating at a breakdown voltage of 80V, it ensures reliable operation in demanding environments. With a superior thermal resistance profile, this power transistor stands up to the rigours of industrial applications, making it a go to solution for engineers looking to enhance energy efficiency in power management systems. Moreover, the extensive validation process guarantees adherence to the highest standards of reliability and safety, ensuring your designs are both performant and resilient.

N channel for efficient power conduction

Low on resistance minimizes power loss

Superior thermal management for longevity

100% avalanche tested for stability

Pb free and RoHS compliant

Halogen free construction for safety

JEDEC qualified for industrial applications

Infineon OptiMOS Type N-Channel MOSFET, 323 A, 80 V Enhancement, 9-Pin PG-TTFN-9 IQD016N08NM5CGATMA1

GRATIS leverans för online beställningar över 500,00 kr

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