Infineon OptiMOS Type N-Channel MOSFET, 151 A, 60 V Enhancement, 8-Pin PG-WHSON-8 IQE022N06LM5SCATMA1

RS-artikelnummer:: 284-755
Tillv. art.nr:: IQE022N06LM5SCATMA1
Tillverkare / varumärke:: Infineon

Infineon OptiMOS Type N-Channel MOSFET, 151 A, 60 V Enhancement, 8-Pin PG-WHSON-8 IQE022N06LM5SCATMA1

Mängdrabatt möjlig

Antal (1 förpackning med 5 enheter)*

128,86 kr

(exkl. moms)

161,075 kr

(inkl. moms)

GRATIS leverans för online beställningar över 500,00 kr

I lager

Dessutom levereras 100 enhet(er) från den 29 december 2025

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Enheter	Per enhet	Per förpackning*
5 - 45	25,772 kr	128,86 kr
50 - 95	24,484 kr	122,42 kr
100 - 495	22,668 kr	113,34 kr
500 - 995	20,876 kr	104,38 kr
1000 +	20,092 kr	100,46 kr

*vägledande pris

RS-artikelnummer:: 284-755
Tillv. art.nr:: IQE022N06LM5SCATMA1
Tillverkare / varumärke:: Infineon

Specifikationer

Datablad

Lagstiftning och ursprungsland

Produktdetaljer

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	151A
	Maximum Drain Source Voltage Vds	60V
	Package Type	PG-WHSON-8
	Series	OptiMOS
	Mount Type	Surface
	Pin Count	8
	Maximum Drain Source Resistance Rds	2.2mΩ
	Channel Mode	Enhancement
	Minimum Operating Temperature	-55°C
	Maximum Power Dissipation Pd	100W
	Maximum Gate Source Voltage Vgs	20 V
	Forward Voltage Vf	1V
	Typical Gate Charge Qg @ Vgs	26nC
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS, JEDEC, IEC61249-2-21
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 151A
	Maximum Drain Source Voltage Vds 60V
	Package Type PG-WHSON-8
	Series OptiMOS
	Mount Type Surface
	Pin Count 8
	Maximum Drain Source Resistance Rds 2.2mΩ
	Channel Mode Enhancement
	Minimum Operating Temperature -55°C
	Maximum Power Dissipation Pd 100W
	Maximum Gate Source Voltage Vgs 20 V
	Forward Voltage Vf 1V
	Typical Gate Charge Qg @ Vgs 26nC
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS, JEDEC, IEC61249-2-21
	Automotive Standard No

Datasheet - IQE022N06LM5SCATMA1

The Infineon MOSFET features an OptiMOS 5 Power Transistor is a highly efficient MOSFET designed to meet the demands of Advanced power management applications. With a power dissipation capacity that allows it to operate reliably under intense conditions, this power transistor ensures optimal efficiency and thermal management. Its Pb free and RoHS compliant construction endorses its usability in eco sensitive applications, while also being halogen free, enhancing its adaptability across various sectors. Fully qualified according to JEDEC standards for industrial applications, it is a trusted component for engineers seeking reliable, high performance solutions.

Optimised for power management

Supports synchronous rectification in SMPS

N channel with logic level compatibility

Very low on resistance for thermal performance

Superior thermal resistance for reliability

100% avalanche tested for operational assurance

Complies with environmental regulations

Comprehensive validation for industrial use

Infineon OptiMOS Type N-Channel MOSFET, 151 A, 60 V Enhancement, 8-Pin PG-WHSON-8 IQE022N06LM5SCATMA1

GRATIS leverans för online beställningar över 500,00 kr

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