Name: Infineon OptiMOS Type N-Channel MOSFET, 331 A, 120 V Enhancement, 16-Pin PG-HDSOP-16 IPTC017N12NM6ATMA1
Brand: Infineon
SKU: 284-694
Price: 118.82 SEK
Availability: OutOfStock

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Välj alla	Attribut	Värde
	Brand	Infineon
	Product Type	MOSFET
	Channel Type	Type N
	Maximum Continuous Drain Current Id	331A
	Maximum Drain Source Voltage Vds	120V
	Series	OptiMOS
	Package Type	PG-HDSOP-16
	Mount Type	Surface
	Pin Count	16
	Maximum Drain Source Resistance Rds	1.7mΩ
	Channel Mode	Enhancement
	Maximum Power Dissipation Pd	395W
	Maximum Gate Source Voltage Vgs	±20 V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS Compliant
	Automotive Standard	No

	Välj alla
	Brand Infineon
	Product Type MOSFET
	Channel Type Type N
	Maximum Continuous Drain Current Id 331A
	Maximum Drain Source Voltage Vds 120V
	Series OptiMOS
	Package Type PG-HDSOP-16
	Mount Type Surface
	Pin Count 16
	Maximum Drain Source Resistance Rds 1.7mΩ
	Channel Mode Enhancement
	Maximum Power Dissipation Pd 395W
	Maximum Gate Source Voltage Vgs ±20 V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS Compliant
	Automotive Standard No

Datasheet - IPTC017N12NM6ATMA1

The Infineon MOSFET features an OptiMOS 6 Power Transistor is engineered for exceptional performance in high frequency switching applications. With a robust design, this MOSFET transistor features an N channel configuration that ensures minimal on state resistance and optimised gate charge characteristics, making it Ideal for modern electronic circuits. Its high avalanche energy rating and wide operating temperature range up to 175°C further enhance reliability across diverse industrial applications. Encased in a PG HDSOP 16 package, this product combines Compact sizing with high thermal performance, making it a valuable choice for engineers seeking reliable and efficient solutions for power management in demanding environments.

N channel configuration for superior control

Very low on resistance reduces energy losses

Optimised gate charge for Faster switching

High avalanche energy boosts circuit robustness

Reliable operation at elevated temperatures

Compact PG HDSOP 16 package maximises space

Pb free lead plating for eco friendly designs

Halogen free promoting sustainability in electronics

Infineon OptiMOS Type N-Channel MOSFET, 331 A, 120 V Enhancement, 16-Pin PG-HDSOP-16 IPTC017N12NM6ATMA1

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