Infineon OptiMOS Type N-Channel MOSFET, 314 A, 120 V Enhancement, 8-Pin PG-HSOF-8-1 IAUTN12S5N017ATMA1

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RS-artikelnummer:
284-669
Tillv. art.nr:
IAUTN12S5N017ATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

314A

Maximum Drain Source Voltage Vds

120V

Series

OptiMOS

Package Type

PG-HSOF-8-1

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

1.7mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

358W

Maximum Gate Source Voltage Vgs

±20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon OptiMOS 5 automotive power MOSFET is engineered for robust performance in demanding applications. Featuring the OptiMOS 5 technology, it excels in efficiency and reliability, making it an Ideal choice for automotive power management solutions. Its N channel enhancement mode structure delivers high level functionality while adhering to rigorous industry standards. Designed to withstand extreme conditions, this power transistor ensures operability up to 175°C and features an extended qualification beyond AEC Q101.

Optimised for automotive compatibility

Enhanced testing ensures dependable performance

Robust design with Advanced thermal management

MSL1 rating supports 260°C Peak reflow

RoHS compliant for eco friendly initiatives

Avalanche testing confirms transient resilience

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