Infineon OptiMOS Type N-Channel MOSFET, 171 A, 100 V Enhancement, 8-Pin PG-WSON-8 BSC030N10NS5SCATMA1

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RS-artikelnummer:
284-640
Tillv. art.nr:
BSC030N10NS5SCATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

171A

Maximum Drain Source Voltage Vds

100V

Series

OptiMOS

Package Type

PG-WSON-8

Mount Type

Surface

Pin Count

8

Channel Mode

Enhancement

Maximum Power Dissipation Pd

188W

Minimum Operating Temperature

-55°C

Maximum Gate Source Voltage Vgs

±20 V

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon OptiMOS Power MOSFET is designed to deliver exceptional performance in demanding applications. As part of the OptiMOS 5 series, it combines ground breaking technology with robust features to meet the needs of industrial applications. With a substantial drain source breakdown voltage of 100V and significant avalanche capability, this component guarantees robust operation in high stress situations. The product’s innovative design streamlines heat dissipation, preserving performance even under heavy loads, which translates to increased longevity and reliability in your circuits.

Dual side cooling optimizes heat distribution

175°C rating for challenging environments

N channel configuration enhances flexibility

Superior thermal resistance maximizes efficiency

100% avalanche tested for reliability

Pb free plating complies with RoHS

Halogen free construction for eco friendliness

Qualified per JEDEC standards for industry

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