Infineon OptiMOS Type N-Channel MOSFET, 144 A, 80 V Enhancement, 8-Pin PG-WSON-8 BSC033N08NS5SCATMA1

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RS-artikelnummer:
284-642
Tillv. art.nr:
BSC033N08NS5SCATMA1
Tillverkare / varumärke:
Infineon
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Brand

Infineon

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

144A

Maximum Drain Source Voltage Vds

80V

Series

OptiMOS

Package Type

PG-WSON-8

Mount Type

Surface

Pin Count

8

Maximum Drain Source Resistance Rds

3.3mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

±20 V

Maximum Power Dissipation Pd

136W

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon OptiMOS Power MOSFET is precisely engineered for excellence in efficient electronic design. This Advanced power MOSFET delivers outstanding performance at 80V, Ideal for synchronous rectification in demanding applications like servers and desktop power supplies. With a dual side cooled package, it significantly reduces thermal resistance, enhancing reliability and thermal management. This product stands out with its robust avalanche tested design, ensuring durability under transient voltage conditions. Benefit from superior thermal conductivity and a Pb free construction that meets strict RoHS compliance standards, making it not only powerful but also environmentally friendly.

Dual side cooled package for thermal management

Engineered for high efficiency in synchronous rectification

100% avalanche validated for reliability

Superior thermal resistance enhances durability

Rated for performance up to 175°C

Pb free plating for environmental compliance

Halogen free standards per IEC61249 2 21

Qualified to JEDEC standards for industry

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