Nexperia PSM Type N-Channel MOSFET, 325 A, 40 V Enhancement, 5-Pin LFPAK PSMN1R0-40SSHJ
- RS-artikelnummer:
- 219-470
- Tillv. art.nr:
- PSMN1R0-40SSHJ
- Tillverkare / varumärke:
- Nexperia
Antal (1 rulle med 2000 enheter)*
66 088,00 kr
(exkl. moms)
82 610,00 kr
(inkl. moms)
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- 2 000 enhet(er) är redo att levereras
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Enheter | Per enhet | Per rulle* |
|---|---|---|
| 2000 + | 33,044 kr | 66 088,00 kr |
*vägledande pris
- RS-artikelnummer:
- 219-470
- Tillv. art.nr:
- PSMN1R0-40SSHJ
- Tillverkare / varumärke:
- Nexperia
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 325A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | PSM | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1mΩ | |
| Channel Mode | Enhancement | |
| Maximum Power Dissipation Pd | 375W | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Source Voltage Vgs | 10 V | |
| Typical Gate Charge Qg @ Vgs | 137nC | |
| Maximum Operating Temperature | 175°C | |
| Height | 1.6mm | |
| Length | 8mm | |
| Standards/Approvals | RoHS | |
| Width | 8 mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 325A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series PSM | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1mΩ | ||
Channel Mode Enhancement | ||
Maximum Power Dissipation Pd 375W | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Source Voltage Vgs 10 V | ||
Typical Gate Charge Qg @ Vgs 137nC | ||
Maximum Operating Temperature 175°C | ||
Height 1.6mm | ||
Length 8mm | ||
Standards/Approvals RoHS | ||
Width 8 mm | ||
Automotive Standard No | ||
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
Low parasitic inductance and resistance
Avalanche rated
Wave solder able
Superfast switching with soft recovery
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