Nexperia PSM Type N-Channel MOSFET, 325 A, 40 V Enhancement, 5-Pin LFPAK PSMN1R0-40SSHJ

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66 088,00 kr

(exkl. moms)

82 610,00 kr

(inkl. moms)

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  • Dessutom levereras 2 000 enhet(er) från den 19 januari 2026
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2000 +33,044 kr66 088,00 kr

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RS-artikelnummer:
219-470
Tillv. art.nr:
PSMN1R0-40SSHJ
Tillverkare / varumärke:
Nexperia
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Brand

Nexperia

Product Type

MOSFET

Channel Type

Type N

Maximum Continuous Drain Current Id

325A

Maximum Drain Source Voltage Vds

40V

Package Type

LFPAK

Series

PSM

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

1mΩ

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

137nC

Minimum Operating Temperature

-55°C

Maximum Power Dissipation Pd

375W

Maximum Gate Source Voltage Vgs

10 V

Maximum Operating Temperature

175°C

Height

1.6mm

Standards/Approvals

RoHS

Width

8 mm

Length

8mm

Automotive Standard

No

The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Low parasitic inductance and resistance

Avalanche rated

Wave solder able

Superfast switching with soft recovery

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