Nexperia PSM Type N-Channel MOSFET, 425 A, 40 V Enhancement, 5-Pin LFPAK PSMNR70-40SSHJ
- RS-artikelnummer:
- 219-468
- Tillv. art.nr:
- PSMNR70-40SSHJ
- Tillverkare / varumärke:
- Nexperia
Mängdrabatt möjlig
Antal (1 längd med 1 enhet)*
53,47 kr
(exkl. moms)
66,84 kr
(inkl. moms)
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Längd(er) | Per Längd |
|---|---|
| 1 - 9 | 53,47 kr |
| 10 - 99 | 48,12 kr |
| 100 + | 44,43 kr |
*vägledande pris
- RS-artikelnummer:
- 219-468
- Tillv. art.nr:
- PSMNR70-40SSHJ
- Tillverkare / varumärke:
- Nexperia
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Nexperia | |
| Product Type | MOSFET | |
| Channel Type | Type N | |
| Maximum Continuous Drain Current Id | 425A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Series | PSM | |
| Package Type | LFPAK | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 0.7mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 144nC | |
| Maximum Power Dissipation Pd | 375W | |
| Maximum Gate Source Voltage Vgs | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 8mm | |
| Width | 8 mm | |
| Standards/Approvals | RoHS | |
| Height | 1.6mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Nexperia | ||
Product Type MOSFET | ||
Channel Type Type N | ||
Maximum Continuous Drain Current Id 425A | ||
Maximum Drain Source Voltage Vds 40V | ||
Series PSM | ||
Package Type LFPAK | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 0.7mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 144nC | ||
Maximum Power Dissipation Pd 375W | ||
Maximum Gate Source Voltage Vgs 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 8mm | ||
Width 8 mm | ||
Standards/Approvals RoHS | ||
Height 1.6mm | ||
Automotive Standard No | ||
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
Low parasitic inductance and resistance
Avalanche rated
Wave solder able
Superfast switching with soft recovery
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