Nexperia PSM Type N-Channel MOSFET, 280 A, 40 V Enhancement, 5-Pin LFPAK PSMN1R0-40YLDX
- RS-artikelnummer:
- 219-426
- Tillv. art.nr:
- PSMN1R0-40YLDX
- Tillverkare / varumärke:
- Nexperia
Mängdrabatt möjlig
Antal (1 längd med 1 enhet)*
26,43 kr
(exkl. moms)
33,04 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- 1 495 enhet(er) är redo att levereras
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Längd(er) | Per Längd |
|---|---|
| 1 - 9 | 26,43 kr |
| 10 - 99 | 23,74 kr |
| 100 - 499 | 22,06 kr |
| 500 - 999 | 20,27 kr |
| 1000 + | 18,26 kr |
*vägledande pris
- RS-artikelnummer:
- 219-426
- Tillv. art.nr:
- PSMN1R0-40YLDX
- Tillverkare / varumärke:
- Nexperia
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Nexperia | |
| Channel Type | Type N | |
| Product Type | MOSFET | |
| Maximum Continuous Drain Current Id | 280A | |
| Maximum Drain Source Voltage Vds | 40V | |
| Package Type | LFPAK | |
| Series | PSM | |
| Mount Type | Surface | |
| Pin Count | 5 | |
| Maximum Drain Source Resistance Rds | 1.1mΩ | |
| Channel Mode | Enhancement | |
| Typical Gate Charge Qg @ Vgs | 59nC | |
| Maximum Power Dissipation Pd | 198W | |
| Maximum Gate Source Voltage Vgs | 4.5 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand Nexperia | ||
Channel Type Type N | ||
Product Type MOSFET | ||
Maximum Continuous Drain Current Id 280A | ||
Maximum Drain Source Voltage Vds 40V | ||
Package Type LFPAK | ||
Series PSM | ||
Mount Type Surface | ||
Pin Count 5 | ||
Maximum Drain Source Resistance Rds 1.1mΩ | ||
Channel Mode Enhancement | ||
Typical Gate Charge Qg @ Vgs 59nC | ||
Maximum Power Dissipation Pd 198W | ||
Maximum Gate Source Voltage Vgs 4.5 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
- COO (Country of Origin):
- PH
The Nexperia N-Channel MOSFET features NextPowerS3 portfolio utilising NXP's unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETS with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
Low parasitic inductance and resistance
Avalanche rated
Wave solder able
Superfast switching with soft recovery
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