Nexperia PSM Type N-Channel MOSFET, 120 A, 100 V Enhancement, 4-Pin LFPAK PSMN3R7-100BSEJ

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42 983,20 kr

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53 728,80 kr

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RS-artikelnummer:
219-347
Tillv. art.nr:
PSMN3R7-100BSEJ
Tillverkare / varumärke:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

100V

Package Type

LFPAK

Series

PSM

Mount Type

Surface

Pin Count

4

Maximum Drain Source Resistance Rds

3.95mΩ

Channel Mode

Enhancement

Maximum Power Dissipation Pd

405W

Maximum Gate Source Voltage Vgs

20 V

Minimum Operating Temperature

25°C

Typical Gate Charge Qg @ Vgs

176nC

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Nexperia N-Channel MOSFET features very low RDS(on) and enhanced safe operating area performance. It is optimized for hot-swap controllers, capable of withstanding high inrush currents and minimizing I²R losses for improved efficiency. Applications include hot-swap, load switching, soft start, and e-fuse.

SOA for superior linear mode operation

LFPAK88 package for applications that demand the highest performance

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