Nexperia PSM Type N-Channel MOSFET, 120 A, 40 V Enhancement, 5-Pin LFPAK PSMN3R2-40YLBX

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15 397,50 kr

(exkl. moms)

19 246,50 kr

(inkl. moms)

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  • Dessutom levereras 3 000 enhet(er) från den 26 december 2025
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1500 +10,265 kr15 397,50 kr

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RS-artikelnummer:
219-294
Tillv. art.nr:
PSMN3R2-40YLBX
Tillverkare / varumärke:
Nexperia
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Brand

Nexperia

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

120A

Maximum Drain Source Voltage Vds

40V

Series

PSM

Package Type

LFPAK

Mount Type

Surface

Pin Count

5

Maximum Drain Source Resistance Rds

3.3mΩ

Channel Mode

Enhancement

Maximum Gate Source Voltage Vgs

10 V

Maximum Power Dissipation Pd

115W

Typical Gate Charge Qg @ Vgs

27nC

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Automotive Standard

No

COO (Country of Origin):
PH
The Nexperia N-Channel MOSFET is utilizing Advanced TrenchMOS Super junction technology. The package is qualified to 175 °C. It is designed for high-performance power switching applications. Key applications include automation, robotics, DC-to-DC converters, brushless DC motor control, industrial load-switching, eFuse, and inrush management.

Low parasitic inductance and resistance

High reliability clip bonded and solder die attach Power SO8 package

Wave solder able

Superfast switching with soft recovery

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