STMicroelectronics SCT SiC N-Channel MOSFET, 30 A, 750 V, 7-Pin HU3PAK SCT060HU75G3AG
- RS-artikelnummer:
- 215-240
- Tillv. art.nr:
- SCT060HU75G3AG
- Tillverkare / varumärke:
- STMicroelectronics
Lagerinformation är för närvarande otillgänglig
- RS-artikelnummer:
- 215-240
- Tillv. art.nr:
- SCT060HU75G3AG
- Tillverkare / varumärke:
- STMicroelectronics
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | STMicroelectronics | |
| Channel Type | N | |
| Maximum Continuous Drain Current | 30 A | |
| Maximum Drain Source Voltage | 750 V | |
| Series | SCT | |
| Package Type | HU3PAK | |
| Mounting Type | Surface Mount | |
| Pin Count | 7 | |
| Channel Mode | Enhancement | |
| Number of Elements per Chip | 1 | |
| Transistor Material | SiC | |
| Välj alla | ||
|---|---|---|
Brand STMicroelectronics | ||
Channel Type N | ||
Maximum Continuous Drain Current 30 A | ||
Maximum Drain Source Voltage 750 V | ||
Series SCT | ||
Package Type HU3PAK | ||
Mounting Type Surface Mount | ||
Pin Count 7 | ||
Channel Mode Enhancement | ||
Number of Elements per Chip 1 | ||
Transistor Material SiC | ||
- COO (Country of Origin):
- JP
The STMicroelectronics Silicon carbide Power MOSFET device has been developed using STs advanced and innovative 3rd generation SiC MOSFET technology. The device features a very low RDS(on) over the entire temperature range combined with low capacitances and very high switching operations, which improve application performance in frequency, energy efficiency, system size and weight reduction.
High speed switching performances
Very fast and robust intrinsic body diode
Very fast and robust intrinsic body diode
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