IXYS Polar Type N-Channel Power MOSFET, 16 A, 500 V Enhancement, 3-Pin TO-247 IXFH16N50P
- RS-artikelnummer:
- 194-524
- Tillv. art.nr:
- IXFH16N50P
- Tillverkare / varumärke:
- IXYS
Mängdrabatt möjlig
Antal (1 enhet)*
69,68 kr
(exkl. moms)
87,10 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- 2 kvar, redo att levereras
- Sista 7 enhet(er) levereras från den 02 januari 2026
Enheter | Per enhet |
|---|---|
| 1 - 4 | 69,68 kr |
| 5 - 9 | 65,52 kr |
| 10 - 14 | 62,50 kr |
| 15 - 19 | 57,90 kr |
| 20 + | 55,10 kr |
*vägledande pris
- RS-artikelnummer:
- 194-524
- Tillv. art.nr:
- IXFH16N50P
- Tillverkare / varumärke:
- IXYS
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | IXYS | |
| Channel Type | Type N | |
| Product Type | Power MOSFET | |
| Maximum Continuous Drain Current Id | 16A | |
| Maximum Drain Source Voltage Vds | 500V | |
| Series | Polar | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Drain Source Resistance Rds | 400mΩ | |
| Channel Mode | Enhancement | |
| Minimum Operating Temperature | -55°C | |
| Typical Gate Charge Qg @ Vgs | 43nC | |
| Maximum Gate Source Voltage Vgs | ±30 V | |
| Maximum Power Dissipation Pd | 300W | |
| Forward Voltage Vf | 1.5V | |
| Maximum Operating Temperature | 150°C | |
| Width | 5.3 mm | |
| Length | 16.26mm | |
| Standards/Approvals | No | |
| Height | 21.46mm | |
| Automotive Standard | No | |
| Välj alla | ||
|---|---|---|
Brand IXYS | ||
Channel Type Type N | ||
Product Type Power MOSFET | ||
Maximum Continuous Drain Current Id 16A | ||
Maximum Drain Source Voltage Vds 500V | ||
Series Polar | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Drain Source Resistance Rds 400mΩ | ||
Channel Mode Enhancement | ||
Minimum Operating Temperature -55°C | ||
Typical Gate Charge Qg @ Vgs 43nC | ||
Maximum Gate Source Voltage Vgs ±30 V | ||
Maximum Power Dissipation Pd 300W | ||
Forward Voltage Vf 1.5V | ||
Maximum Operating Temperature 150°C | ||
Width 5.3 mm | ||
Length 16.26mm | ||
Standards/Approvals No | ||
Height 21.46mm | ||
Automotive Standard No | ||
N-channel Power MOSFET, IXYS HiperFET™ Polar™ Series
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS
MOSFET Transistors, IXYS
A wide range of advanced discrete Power MOSFET devices from IXYS
relaterade länkar
- IXYS Polar Type N-Channel Power MOSFET 500 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247 IXFH16N50P3
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247
- IXYS Type N-Channel MOSFET 500 V Enhancement, 3-Pin TO-247