IXYS HiperFET, Polar N-Channel MOSFET, 10 A, 800 V, 3-Pin TO-220 IXFP10N80P

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RS-artikelnummer:
194-057
Tillv. art.nr:
IXFP10N80P
Tillverkare / varumärke:
IXYS
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Brand

IXYS

Channel Type

N

Maximum Continuous Drain Current

10 A

Maximum Drain Source Voltage

800 V

Package Type

TO-220

Series

HiperFET, Polar

Mounting Type

Through Hole

Pin Count

3

Maximum Drain Source Resistance

1.1 Ω

Channel Mode

Enhancement

Maximum Gate Threshold Voltage

5.5V

Maximum Power Dissipation

300 W

Transistor Configuration

Single

Maximum Gate Source Voltage

-30 V, +30 V

Length

10.66mm

Number of Elements per Chip

1

Maximum Operating Temperature

+150 °C

Typical Gate Charge @ Vgs

40 nC @ 10 V

Width

4.83mm

Transistor Material

Si

Height

9.15mm

Minimum Operating Temperature

-55 °C

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