STMicroelectronics SuperMESH Type N-Channel MOSFET, 3 A, 800 V Enhancement, 3-Pin TO-252 STD4NK80ZT4

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330,62 kr

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413,28 kr

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200 - 48015,703 kr314,06 kr
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1000 - 198013,395 kr267,90 kr
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Förpackningsalternativ:
RS-artikelnummer:
151-900
Tillv. art.nr:
STD4NK80ZT4
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Channel Type

Type N

Product Type

MOSFET

Maximum Continuous Drain Current Id

3A

Maximum Drain Source Voltage Vds

800V

Package Type

TO-252

Series

SuperMESH

Mount Type

Surface

Pin Count

3

Maximum Drain Source Resistance Rds

3.5Ω

Channel Mode

Enhancement

Typical Gate Charge Qg @ Vgs

22.5nC

Minimum Operating Temperature

-55°C

Forward Voltage Vf

1.6V

Maximum Gate Source Voltage Vgs

±30 V

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Length

10.1mm

Width

6.6 mm

Height

2.4mm

Automotive Standard

No

COO (Country of Origin):
CN
The STMicroelectronics Power MOSFET, it is high-voltage device with Zener-protected N-channel developed using the SuperMESH technology ,an optimization of the well-established PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.

Gate charge minimized

Very low intrinsic capacitance

Zener-protected

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