Infineon 1 Typ N Kanal Enkel, MOSFET, 210 A 30 V Förbättring, 3 Ben, TO-247AC, HEXFET

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RS-artikelnummer:
543-1156
Tillv. art.nr:
IRFP3703PBF
Tillverkare / varumärke:
Infineon
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Varumärke

Infineon

Produkttyp

MOSFET

Kanaltyp

Typ N

Maximal kontinuerlig dräneringsström Id

210A

Maximal källspänning för dränering Vds

30V

Kapseltyp

TO-247AC

Serie

HEXFET

Typ av fäste

Genomgående hål

Antal ben

3

Kanalläge

Förbättring

Minsta arbetsstemperatur

-55°C

Framåtriktad spänning Vf

1.3V

Maximal effektförlust Pd

3.8W

Transistorkonfiguration

Enkel

Maximal arbetstemperatur

175°C

Längd

15.9mm

Höjd

20.3mm

Antal element per chip

1

Infineon HEXFET Series MOSFET, 210A Maximum Continuous Drain Current, 3.8W Maximum Power Dissipation - IRFP3703PBF


This high current MOSFET is essential for applications that require efficient power management. Its HEXFET technology ensures it meets performance criteria across various industrial and electronic uses. As an N-channel device, it provides substantial current handling and effective voltage control in robust and efficient semiconductor systems.

Features & Benefits


• Handles up to 210A continuous drain current

• Low on-resistance of 2.8mΩ minimises power losses

• Optimised for high-speed operations with quick turn-on and turn-off

• Single transistor configuration simplifies circuit design

Applications


• Used in power management systems for efficient switching

• Applied in synchronous rectification to enhance energy conversion

• Integrated in industrial automation equipment for dependable operation

• Utilised in power supplies requiring high efficiency and minimal heat generation

• Suitable for automotive needing durable components

What type of applications is this device best suited for?


This device excels in power management, particularly in synchronous rectification and industrial automation, owing to its high current handling and voltage capabilities.

How does the high continuous drain current affect performance?


The ability to manage 210A continuously allows for efficient energy transfer while reducing heat generation, thereby improving overall performance and reliability.

What are the implications of the low on-resistance?


A low on-resistance of 2.8mΩ greatly diminishes power losses during operation, enhancing efficiency and aiding in thermal management under high-load conditions.

What operating temperature range can this device handle?


It functions effectively over a wide temperature span from -55°C to +175°C, making it suitable for various demanding environments.

How does the MOSFET’s configuration improve circuit design?


The single transistor configuration streamlines circuit layouts, reducing the number of required components while ensuring dependable operation in high-speed applications.

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