onsemi NGTB40N65FL2WG IGBT, 80 A 650 V, 3-Pin TO-247, Through Hole
- RS-artikelnummer:
- 842-7905
- Tillv. art.nr:
- NGTB40N65FL2WG
- Tillverkare / varumärke:
- onsemi
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Antal (1 förpackning med 2 enheter)*
138,99 kr
(exkl. moms)
173,738 kr
(inkl. moms)
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Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 2 - 18 | 69,495 kr | 138,99 kr |
| 20 + | 59,865 kr | 119,73 kr |
*vägledande pris
- RS-artikelnummer:
- 842-7905
- Tillv. art.nr:
- NGTB40N65FL2WG
- Tillverkare / varumärke:
- onsemi
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
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Välj alla | Attribut | Värde |
|---|---|---|
| Brand | onsemi | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 366 W | |
| Package Type | TO-247 | |
| Mounting Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Transistor Configuration | Single | |
| Dimensions | 16.26 x 5.3 x 21.08mm | |
| Minimum Operating Temperature | -55 °C | |
| Maximum Operating Temperature | +175 °C | |
| Välj alla | ||
|---|---|---|
Brand onsemi | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 366 W | ||
Package Type TO-247 | ||
Mounting Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Transistor Configuration Single | ||
Dimensions 16.26 x 5.3 x 21.08mm | ||
Minimum Operating Temperature -55 °C | ||
Maximum Operating Temperature +175 °C | ||
IGBT Discretes, ON Semiconductor
Insulated Gate Bipolar Transistors (IGBT) for motor drive and other high current switching applications.
IGBT Discretes, ON Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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