Infineon FP15R12W1T4BOMA1 IGBT Module, 28 A 1200 V
- RS-artikelnummer:
- 244-5387
- Tillv. art.nr:
- FP15R12W1T4BOMA1
- Tillverkare / varumärke:
- Infineon
Mängdrabatt möjlig
Antal (1 enhet)*
519,12 kr
(exkl. moms)
648,90 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
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- 24 enhet(er) är redo att levereras
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Enheter | Per enhet |
|---|---|
| 1 - 1 | 519,12 kr |
| 2 - 4 | 493,14 kr |
| 5 - 9 | 443,86 kr |
| 10 + | 441,28 kr |
*vägledande pris
- RS-artikelnummer:
- 244-5387
- Tillv. art.nr:
- FP15R12W1T4BOMA1
- Tillverkare / varumärke:
- Infineon
Specifikationer
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
Hitta liknande produkter genom att välja ett eller flera attribut.
Välj alla | Attribut | Värde |
|---|---|---|
| Brand | Infineon | |
| Maximum Continuous Collector Current | 28 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | +/-20V | |
| Number of Transistors | 7 | |
| Maximum Power Dissipation | 130 W | |
| Välj alla | ||
|---|---|---|
Brand Infineon | ||
Maximum Continuous Collector Current 28 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage +/-20V | ||
Number of Transistors 7 | ||
Maximum Power Dissipation 130 W | ||
The infineon IGBT module is suitable for auxiliary inverters, motor drives and air conditioning etc.
Electrical features
Low switching losses, low inductive design
Trench IGBT 3
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
Al2O3 substrate with low thermal resistance
Compact design
Solder contact technology
Rugged mounting due to integrated mounting clamps
Low switching losses, low inductive design
Trench IGBT 3
VCEsat with positive temperature coefficient
Low VCEsat
Mechanical features
Al2O3 substrate with low thermal resistance
Compact design
Solder contact technology
Rugged mounting due to integrated mounting clamps
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