STMicroelectronics STGWA30H65DFB2 IGBT, 50 A 650 V, 3-Pin TO-247

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671,43 kr

(exkl. moms)

839,28 kr

(inkl. moms)

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Enheter
Per enhet
Per Rør*
30 - 9022,381 kr671,43 kr
120 - 27020,612 kr618,36 kr
300 - 57020,07 kr602,10 kr
600 - 117019,555 kr586,65 kr
1200 +19,066 kr571,98 kr

*vägledande pris

RS-artikelnummer:
204-9877
Tillv. art.nr:
STGWA30H65DFB2
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

167 W

Number of Transistors

1

Package Type

TO-247

Pin Count

3

COO (Country of Origin):
CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution
Low thermal resistance

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