STMicroelectronics STGB30H65DFB2 IGBT, 50 A 650 V, 3-Pin D2PAK (TO-263)

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13 764,00 kr

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17 205,00 kr

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RS-artikelnummer:
204-9867
Tillv. art.nr:
STGB30H65DFB2
Tillverkare / varumärke:
STMicroelectronics
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Brand

STMicroelectronics

Maximum Continuous Collector Current

50 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Maximum Power Dissipation

167 W

Number of Transistors

1

Package Type

D2PAK (TO-263)

Pin Count

3

COO (Country of Origin):
CN
The STMicroelectronics IGBT 650 V HB2 series represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy.

Maximum junction temperature : TJ = 175 °C
Low VCE(sat) = 1.65 V (typ.) @ IC = 30 A
Very fast and soft recovery co-packaged diode
Minimized tail current
Tight parameter distribution

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