Vishay SIA456DJ-T1-GE3 IGBT
- RS-artikelnummer:
- 180-7793
- Tillv. art.nr:
- SIA456DJ-T1-GE3
- Tillverkare / varumärke:
- Vishay
Mängdrabatt möjlig
Antal (1 förpackning med 10 enheter)*
76,16 kr
(exkl. moms)
95,20 kr
(inkl. moms)
GRATIS leverans för online beställningar över 500,00 kr
Sista RS lager
- Slutlig(a) 1 120 enhet(er), redo att levereras
Enheter | Per enhet | Per förpackning* |
|---|---|---|
| 10 - 90 | 7,616 kr | 76,16 kr |
| 100 - 240 | 7,246 kr | 72,46 kr |
| 250 - 490 | 6,093 kr | 60,93 kr |
| 500 - 990 | 5,712 kr | 57,12 kr |
| 1000 + | 4,95 kr | 49,50 kr |
*vägledande pris
- RS-artikelnummer:
- 180-7793
- Tillv. art.nr:
- SIA456DJ-T1-GE3
- Tillverkare / varumärke:
- Vishay
Datablad
Lagstiftning och ursprungsland
Produktdetaljer
- COO (Country of Origin):
- CN
Vishay MOSFET
The Vishay surface mount N-channel SC-70-6 MOSFET is a new age product with a drain-source voltage of 200V and a maximum gate-source voltage of 16V. It has a drain-source resistance of 1380mohms at a gate-source voltage of 4.5V. It has a maximum power dissipation of 19W and continuous drain current of 2.6A. It has a minimum and a maximum driving voltage of 1.8V and 4.5V respectively. It has application in boost converter for portable devices. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.
Features and Benefits
• Halogen free
• Low on-resistance
• New thermally enhanced PowerPAK SC-70 package - Small footprint area
• Operating temperature ranges between -55°C and 150°C
• TrenchFET Power MOSFET
• Low on-resistance
• New thermally enhanced PowerPAK SC-70 package - Small footprint area
• Operating temperature ranges between -55°C and 150°C
• TrenchFET Power MOSFET
Certifications
• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• BS EN 61340-5-1:2007