Vishay SIA433EDJ-T1-GE3 IGBT

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Antal (1 förpackning med 20 enheter)*

48,18 kr

(exkl. moms)

60,22 kr

(inkl. moms)

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RS-artikelnummer:
180-7754
Tillv. art.nr:
SIA433EDJ-T1-GE3
Tillverkare / varumärke:
Vishay

Vishay MOSFET


The Vishay surface mount P-channel PowerPAK-SC70-6 MOSFET is a new age product with a drain-source voltage of 20V and a maximum gate-source voltage of 12V. It has a drain-source resistance of 18mohms at a gate-source voltage of 4.5V. It has a maximum power dissipation of 19W and continuous drain current of 12A. It has a minimum and a maximum driving voltage of 1.8V and 4.5V respectively. This product has been optimized for lower switching and conduction losses. The MOSFET offers excellent efficiency along with a long and productive life without compromising performance or functionality.

Features and Benefits


• Built-in ESD protection with zener diode
• Halogen free
• Lead (Pb) free component
• Low on-resistance
• New thermally enhanced PowerPAK SC-70 package
• Operating temperature ranges between -55°C and 150°C
• Small footprint area
• TrenchFET power MOSFET
• Typical ESD performance is 1800V

Applications


• Battery switches
• Charger switches
• Load switches
• Portable devices

Certifications


• ANSI/ESD S20.20:2014
• BS EN 61340-5-1:2007
• Rg tested

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